收藏本站
Si4324DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0032 at V GS = 10 V
0.0042 at V GS = 4.5 V
I D (A) a
36
29
Q g (Typ.)
25.5 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g Tested
APPLICATIONS
? Synchronous Buck-Low Side
- Notebook
- Server
SO-8
- Workstation
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
? Synchronous Rectifier-POL
G
D
Top V ie w
S
Orderin g Information: Si4324DY-T1-E3 (Lead (P b )-free)
Si4324DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
36
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
29
24 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
19 b, c
70
7.0
3.0 b, c
40
8 0
A
mJ
T C = 25 °C
7. 8
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
5.0
3.5 b, c
W
T A = 70 °C
2.2 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
29
13
35
16
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 8 0 °C/W.
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4330-B1-FM IC RCVR ISM 960MHZ 3.6V 20-QFN
SI4354DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4355-B1A-FM IC EZRADIO FM RECEIVER SI4355
SI4388DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4390DY-T1-GE3 MOSFET N-CH 30V 8.5A 8SOIC
SI4396DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4398DY-T1-GE3 MOSFET N-CH 20V 19A 8-SOIC
SI4404DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
相关代理商/技术参数
SI4330-A0-FM 功能描述:射频接收器 Receivers - IA4330 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4330-B1 制造商:SILABS 制造商全称:SILABS 功能描述:Si4330 ISM RECEIVER
Si4330-B1-FM 功能描述:射频接收器 Si4330 EZradioPRO Transceiver (rev B1) RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4330-B1-FMR 功能描述:射频接收器 Si4330 EZradioPRO Transceiver (rev B1) RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4330DY 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 30V 6.6A 8SOIC - Rail/Tube
SI4330DY-T1 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 30V 6.6A 8SOIC - Tape and Reel
SI4330DYT1E3 制造商:Vishay Intertechnologies 功能描述:
SI4330DY-T1-E3 功能描述:MOSFET DUAL N-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
    • 我
    • 采购
    • 搜索
    • 会员